Integration of schottky diode with mosfet

The semiconductor device includes: a buried grid structure having a substrate and a drift layer; a MOSFET structure integrated on the drift layer of the buried grid structure and having a first source node in electrical communication with the source, a first drain node in electrical communication wi...

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Bibliographic Details
Main Authors THIERRY-JEBALI NICOLAS, ELIHIPANAH, HOSSEIN, RESHANOV, SERGEY, SCHONER ADOLF
Format Patent
LanguageChinese
English
Published 26.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device includes: a buried grid structure having a substrate and a drift layer; a MOSFET structure integrated on the drift layer of the buried grid structure and having a first source node in electrical communication with the source, a first drain node in electrical communication with the drain, and a first gate node in electrical communication with the gate; a Schottky diode structure integrated on the same drift layer of the buried grid structure adjacent to the MOSFET structure, connected in parallel with the MOSFET structure, and having a first anode in electrical communication with the source and a first cathode in electrical communication with the drain; and a diode structure integrated on the semiconductor device, connected in parallel with the Schottky diode structure and the MOSFET structure, having a second anode in electrical communication with the source and a second cathode in electrical communication with the drain. The invention also relates to a semiconductor device which comp
Bibliography:Application Number: CN202311454715