Semiconductor element and preparation method thereof

The invention provides a semiconductor element and a preparation method thereof. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode, and a first dielectric...

Full description

Saved in:
Bibliographic Details
Main Author CHAE JIN WOO
Format Patent
LanguageChinese
English
Published 19.01.2024
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:The invention provides a semiconductor element and a preparation method thereof. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode, and a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode. 本申请提供一种半导体元件及其制备方法。该半导体元件包括具有一沟槽的一基底以及该沟槽中的一栅极结构。该沟槽包括一下栅极电极、该下栅极电极上方的一上栅极电极、以及部分设置于该下栅极电极与该上栅极电极之间的一第一介电层。
Bibliography:Application Number: CN202310816971