Photoelectric regulation and control nerve synapse transistor and preparation method thereof

• Main Authors: CHEN CHAOHUI, FENG CHAO, WANG YUHAO, ZHAO MIAO, PENG CHONGMEI
• Format: Patent
• Language: Chinese; English
• Published: 19.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a photoelectric regulation nerve synapse transistor and a preparation method, the photoelectric regulation nerve synapse transistor comprises a substrate, a back gate electrode, a ferroelectric film, a channel layer and a light anti-reflection layer, two ends of the light anti-reflection layer are respectively provided with a source electrode and a drain electrode, the material of the channel layer comprises one or more layers of low-dimensional materials, at least one layer of low-dimensional materials is in contact with the source electrode and the drain electrode, and the ferroelectric film is in contact with the source electrode and the drain electrode. Wherein the low-dimensional material is a two-dimensional material or a one-dimensional material; the ferroelectric film has a ferroelectric polarization effect, and the polarization turnover characteristic is regulated and controlled by the back gate electrode. According to the invention, the structure of the photoelectric regulati