Semiconductor wafer manufacturing apparatus

• Main Authors: MORI HIROTAKA, SATOMURA TAKAYUKI, TAKAGI SHIGEYUKI, FUJIBAYASHI HIROAKI
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

In a semiconductor wafer manufacturing apparatus, a susceptor (50) is provided in a plate shape having one surface (50a) and the other surface (50b), the susceptor (50) is disposed in a cylindrical section (41) such that the one surface (50a) side is positioned on a reaction chamber (20a) side and the other surface (50b) side is positioned on a hollow chamber (41a) side, a recess (51) for accommodating a base wafer (10) is formed on the one surface (50a) side, and the recess (51) is set to have a size such that a gap (S1) is formed between a side surface (51b) and the base wafer (10). Through holes (54a, 54b) penetrating through the bottom (51a) are formed in the bottom (51a), and the hollow chamber (41) adjusts the amount of inert gas discharged from the inert gas exhaust pipe so that the pressure is equal to or greater than the pressure of the reaction chamber and equal to or less than a predetermined pressure. 半导体晶圆的制造装置中，基座(50)被设为具有一面(50a)及另一面(50b)的板状，以一面(50a)侧位于反应室(20a)侧并且另一面(50b)侧位于中空室(41a)侧的方式配置于筒部(41)