Wafer processing method with high yield
The invention relates to the technical field of wafer processing, and discloses a wafer processing method with high yield, which comprises the following steps: S1, wafer processing: rounding a silicon material to obtain a cylindrical silicon material, milling and grinding the end surface of the cyli...
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Main Author | |
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Format | Patent |
Language | Chinese English |
Published |
12.01.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of wafer processing, and discloses a wafer processing method with high yield, which comprises the following steps: S1, wafer processing: rounding a silicon material to obtain a cylindrical silicon material, milling and grinding the end surface of the cylindrical silicon material to make the end surface of the cylindrical silicon material smooth, and then taking the end surface of the cylindrical material as a positioning reference surface, and correcting the circumferential surface of the cylindrical material around the axis of the cylindrical material, and finally cutting the cylindrical material to obtain the wafer. According to the method, the wafer can be thoroughly cleaned, impurities on the surface of the wafer can be thoroughly removed, the performance of a semiconductor device is improved, meanwhile, the yield of products is improved, the phenomenon that water vapor is condensed on the surface of the wafer can be avoided, the yield of the products after waf |
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Bibliography: | Application Number: CN202311553665 |