Vertical charge transfer imaging sensor and manufacturing method thereof

• Main Authors: YI KAIYANG, ZHENG ZHIQIANG, CAO KAIWEI
• Format: Patent
• Language: Chinese; English
• Published: 02.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a vertical charge transfer imaging sensor and a manufacturing method thereof. In the vertical charge transfer imaging sensor, deep trench isolations define a first number of pixel regions and a second number of first common substrate regions in a substrate, a second common substrate region is arranged between the deep trench isolations and the back surface of the substrate, the second common substrate region is communicated with each pixel region and the first common substrate region, and the first common substrate region is communicated with the second common substrate region. The shallow trench isolation defines a photosensitive area and a charge reading area in each pixel area, the gate structure is formed on the surface of the pixel area, the gate structure and the pixel area below the gate structure form an MOS capacitor, the substrate end voltage of the MOS capacitor is applied to the first common substrate area from one side of the front surface of the substrate, and the substr