Preparation method and preparation device of TiAlC film and NMOS (N-channel Metal Oxide Semiconductor) device

• Main Authors: TAN HAO, ZHAO YUHAN, WEI DE, SUN MENGMENG, FENG JIAHENG
• Format: Patent
• Language: Chinese; English
• Published: 02.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention provides a preparation method of a TiAlC thin film, a preparation device of the TiAlC thin film and an NMOS (N-channel Metal Oxide Semiconductor) device. The preparation method of the TiAlC film comprises the following steps: providing a Ti-containing precursor and an Al-containing precursor for a target sample of a to-be-generated TiAlC film, and providing high temperature for the target sample so as to generate a TiAlC-containing intermediate film on the surface of the target sample; and at a high temperature, H2 is provided for the intermediate film containing TiAlC, redundant C elements are reduced and released from the intermediate film, so that the work function of the intermediate film is reduced, and the TiAlC film with the low work function is obtained on the surface of the target sample. According to the method, H2 is provided for the intermediate film containing TiAlC at a high temperature, so that redundant C elements in the TiAlC film can be removed through oxidation-reduction react