Semiconductor switch for high voltage operation

A semiconductor switch (335, 340) for high voltage operation is described. The semiconductor switch includes a first DE-NMOS FET (T1, T3) including a gate coupled to a node (N1, N2) of the switch, a source and a drain thereof coupled to an input node and an output node (220, 245, 230), respectively....

Full description

Saved in:
Bibliographic Details
Main Authors RDOMINGHA, RICHARD KULSHRESTHA
Format Patent
LanguageChinese
English
Published 26.12.2023
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Online AccessGet full text

Cover

More Information
Summary:A semiconductor switch (335, 340) for high voltage operation is described. The semiconductor switch includes a first DE-NMOS FET (T1, T3) including a gate coupled to a node (N1, N2) of the switch, a source and a drain thereof coupled to an input node and an output node (220, 245, 230), respectively. The switch also includes a second DE-NMOS FET (T2, T4), the drain of which is coupled to the node (N1, N2). The gate of the second DE-NMOS FET (T2, T4) is configured to receive a signal (HVENB, HVEN) to enable or disable the switch (335, 340). The switch includes a voltage source (e.g., a voltage-controlled voltage source) (336, 341) coupled to the node (N1, N2) that supplies a first voltage at the node (N1, N2). The first voltage is greater than a second voltage at the input node (220, 245) by a predetermined amount such that the first DE-NMOS FET (T1, T3) can operate within a safe operating region while supporting high voltage operation. The switch also includes a current source (337, 342) configured to supply a
Bibliography:Application Number: CN202310759924