Semiconductor structure and preparation method thereof

• Main Author: ZHOU SHAOKE
• Format: Patent
• Language: Chinese; English
• Published: 26.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate, an epitaxial layer, an insulating layer, an electrode and a stress blocking hole. The epitaxial layer is arranged on the substrate; the insulating layer is arranged on the epitaxial layer and comprises an interlayer dielectric layer located at the top and a middle dielectric layer located between the interlayer dielectric layer and the epitaxial layer; the electrode comprises a source electrode, a drain electrode and a grid electrode and is arranged on the epitaxial layer, the source electrode and the drain electrode penetrate through at least part of the middle dielectric layer, and the grid electrode penetrates through the middle dielectric layer and is covered by the interlayer dielectric layer; the stress blocking hole is located on the outer side of the electrode, and the stress blocking hole penetrates through the epitaxial layer and a part of the substrate, or the stress