Method for characterizing silicon single crystal defects

• Main Authors: ZHENG TIEBO, GIANNATSIO ARMANDO, LIANG XINGBO, ZHAO JING, HAN MOAN
• Format: Patent
• Language: Chinese; English
• Published: 19.12.2023
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention discloses a characterization method of silicon single crystal defects, which comprises the following steps: preparing a first silicon single crystal wafer and a second silicon single crystal wafer which are equivalent, spraying a copper nitrate solution on the surface of the first silicon single crystal wafer, drying, carrying out heat treatment for 10-30 minutes, carrying out preferred etching treatment on the surface of the first silicon single crystal wafer, and observing whether COP, L-pits and P-band defects exist or not, treating the surface of the second silicon single crystal wafer, drying, carrying out heat treatment for 2-4H, carrying out preferred etching treatment on the surface of the second silicon single crystal wafer, and observing that the second silicon single crystal wafer corresponds to a first non-etching defect area in the first silicon single crystal wafer; the surface in the area can be a second non-etching defect area or a second etching defect area, or comprises the sec