Deposition of vanadium-containing films

• Main Authors: IVANOV SERGEI V, SAVO MICHAEL T
• Format: Patent
• Language: Chinese; English
• Published: 15.12.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The disclosed and claimed subject matter relates to a method for depositing a vanadium-containing film comprising vanadium nitride and vanadium oxynitride. The methods generally include (i) contacting the substrate with a vanadium oxytrichloride vapor in a deposition reactor, (ii) purging any unreacted vanadium oxytrichloride with an inert gas, (iii) contacting the substrate with a nitrogen-containing reactant in the deposition reactor, and (iv) purging any unreacted nitrogen-containing reactant with an inert gas. Additional steps may include, for example, (v) treating the substrate with a plasma to remove residual oxygen from the nitrogen oxide film. 所公开和要求保护的主题涉及一种用于沉积包括氮化钒和氮氧化钒的含钒膜的方法。该方法一般包括(i)在沉积反应器中使衬底与三氯氧化钒蒸气接触，(ii)用惰性气体吹扫任何未反应的三氯氧化钒，(iii)在沉积反应器中使衬底与含氮反应物接触，以及(iv)用惰性气体吹扫任何未反应的含氮反应物。另外的步骤可以包括例如(v)用等离子体处理衬底以从氮氧化物膜去除残留氧。