Method for manufacturing semiconductor device

• Main Authors: NAGAYA MASATAKE, NAGUMO YUJI, UECHA MASAFUMI, KITAICHI MITSURU, OKUDA MASARU, TAKEDA MASAKAZU, MORI AKIRA, KIYAMA NAOYA
• Format: Patent
• Language: Chinese; English
• Published: 08.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This method for manufacturing a semiconductor device is provided with a step in which a pressing member is pressed against a first surface of a semiconductor substrate having a plurality of element regions along the boundaries of the element regions, thereby pressing the first surface of the semiconductor substrate on the first surface side of the semiconductor substrate. A step for forming a crack extending along the boundary and in the thickness direction of the semiconductor substrate; a step in which, after the step in which the cracks are formed, a metal film is formed on the first surface so as to straddle the plurality of element regions; and a step of, after the step of forming the metal film, dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member against the semiconductor substrate along the boundary from a second surface side located on the back side of the first surface. 半导体装置的制造方法，具备以下工序：对于具有多个元件区域的半导体基板的第1表面，沿着上述元件区域的边界推抵推压部件，从而在上述半导体基板的第1表面侧，形成沿着