Semiconductor device including pad pattern and method of manufacturing same

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region including a first impurity region and a second impurity region spaced apart from the first impurity region; an isolation region defining an activ...

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Main Authors CHOI MIN SU, KIM SO-YOUNG
Format Patent
LanguageChinese
English
Published 05.12.2023
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Abstract A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region including a first impurity region and a second impurity region spaced apart from the first impurity region; an isolation region defining an active region; a gate structure intersecting with the active region and extending in a first direction parallel to the substrate; a first pad pattern disposed on the first impurity region; a second pad pattern disposed on the second impurity region; a bit line disposed on the first pad pattern and extending in a second direction, where the second direction is perpendicular to the first direction and parallel to the substrate; and a contact structure on the second pad pattern, in which the second pad pattern has a first side surface and a second side surface opposite to each other in the first direction, both the first side surface and the second side surface being curved along a plane parallel to the substrate. 提供了一种半导体
AbstractList A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region including a first impurity region and a second impurity region spaced apart from the first impurity region; an isolation region defining an active region; a gate structure intersecting with the active region and extending in a first direction parallel to the substrate; a first pad pattern disposed on the first impurity region; a second pad pattern disposed on the second impurity region; a bit line disposed on the first pad pattern and extending in a second direction, where the second direction is perpendicular to the first direction and parallel to the substrate; and a contact structure on the second pad pattern, in which the second pad pattern has a first side surface and a second side surface opposite to each other in the first direction, both the first side surface and the second side surface being curved along a plane parallel to the substrate. 提供了一种半导体
Author KIM SO-YOUNG
CHOI MIN SU
Author_xml – fullname: CHOI MIN SU
– fullname: KIM SO-YOUNG
BookMark eNqNyjsKAjEQgOEUWvi6w3gAi7BoalkUQbDRfhkykzWwmYQ8PL8KHsDi52--pZpJFF6o652Dt1Go2RozEL-8ZfBip0ZeRkhIn2rlLIBCELg-I0F0EFCaQ1tb_rqCgddq7nAqvPl9pbbn06O_7DjFgUtCy8J16G9aG23M_tAdu3_MG65GN34
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 包括焊盘图案的半导体装置及其制造方法
ExternalDocumentID CN117177563A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN117177563A3
IEDL.DBID EVB
IngestDate Fri Jul 19 12:49:28 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN117177563A3
Notes Application Number: CN202310642728
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231205&DB=EPODOC&CC=CN&NR=117177563A
ParticipantIDs epo_espacenet_CN117177563A
PublicationCentury 2000
PublicationDate 20231205
PublicationDateYYYYMMDD 2023-12-05
PublicationDate_xml – month: 12
  year: 2023
  text: 20231205
  day: 05
PublicationDecade 2020
PublicationYear 2023
RelatedCompanies SAMSUNG ELECTRONICS CO., LTD
RelatedCompanies_xml – name: SAMSUNG ELECTRONICS CO., LTD
Score 3.6452715
Snippet A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
Title Semiconductor device including pad pattern and method of manufacturing same
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231205&DB=EPODOC&locale=&CC=CN&NR=117177563A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7mFPVNp6LzBxGkb8Otbdr5UMSlG0NZN3TK3kbaZjhx6dg6BP967-LmfNGHQEggJAeXu0vu-w7gKk0dO3Z9j5gffQxQuFORfFSvSFs66L_Xbd8ngHMn8trP7v2ADwrwtsLCGJ7QD0OOiBqVoL7n5r6erh-xQpNbOb-OxziU3bb6QWgto2N0Vuwqt8JG0Ox1w66whAhEZEWPQa2GcYvPPeduAzbJjSae_eZLg1Ap098mpbUHWz1cTef7UPh8LcGOWFVeK8F2Z_nhjd2l7s0P4OGJ8tgzTQSt2YylinScjXXyviD7w6YyxUbgHM2kTtl3bWiWjdhE6gUBGAwikc3lRB3CZavZF-0K7mr4I4KhiNYHcI6gqDOtjoEpvGkVOkBpQsSCLkYv0uVxYvv1kXcTq-oJlP9ep_zf5CnskjhN4gY_g2I-W6hzNL95fGHk9gWCDYnY
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT8IwEL4gGvFNUaP4qyZmb0TY1g0fFiMdBAUGUTS8kW7rIkY6AiMm_vVeK4gv-tCkaZOmveR6d-193wFcxbFlhrbrKOZHFwMUapU5TWplbnIL_fea6boK4NwNnNaz_TCkwxy8rbAwmif0Q5MjokZFqO-Zvq-n60csX-dWzq_DMQ6lt82B5xvL6BidFbNCDb_uNfo9v8cMxjwWGMGjV61i3OJSx7rbgE1XsfMq1-mlrlAp098mpbkLW31cTWZ7kPt8LUKBrSqvFWG7u_zwxu5S9-b70H5SeeypVASt6YzEQuk4GcvofaHsD5nyGJsC50jCZUy-a0OTNCETLhcKwKARiWTOJ-IALpuNAWuVcVejHxGMWLA-gHUIeZlKcQRE4E0r0AGKI0UsaGP0wm0aRqZbS5ybUFSOofT3OqX_Ji-g0Bp0O6POfdA-gR0lWp3EQU8hn80W4gxNcRaeaxl-AR1fjMU
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+including+pad+pattern+and+method+of+manufacturing+same&rft.inventor=CHOI+MIN+SU&rft.inventor=KIM+SO-YOUNG&rft.date=2023-12-05&rft.externalDBID=A&rft.externalDocID=CN117177563A