Semiconductor device including pad pattern and method of manufacturing same

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region including a first impurity region and a second impurity region spaced apart from the first impurity region; an isolation region defining an activ...

Full description

Saved in:
Bibliographic Details
Main Authors CHOI MIN SU, KIM SO-YOUNG
Format Patent
LanguageChinese
English
Published 05.12.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes: a substrate; an active region including a first impurity region and a second impurity region spaced apart from the first impurity region; an isolation region defining an active region; a gate structure intersecting with the active region and extending in a first direction parallel to the substrate; a first pad pattern disposed on the first impurity region; a second pad pattern disposed on the second impurity region; a bit line disposed on the first pad pattern and extending in a second direction, where the second direction is perpendicular to the first direction and parallel to the substrate; and a contact structure on the second pad pattern, in which the second pad pattern has a first side surface and a second side surface opposite to each other in the first direction, both the first side surface and the second side surface being curved along a plane parallel to the substrate. 提供了一种半导体
Bibliography:Application Number: CN202310642728