SiC single crystal substrate

• Main Authors: KAMEI KOJI, OYANAGI NAOKI, YAMAGUCHI TAKUYA
• Format: Patent
• Language: Chinese; English
• Published: 05.12.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present disclosure relates to a SiC single crystal substrate. Provided is a dense SiC single crystal substrate in which local through dislocations are reduced. A SiC single crystal substrate (1) according to the present invention has a diameter of 199 mm or more, and has a through-dislocation density of 5 * 104/cm2 or less in each arbitrary 0.25 mm2 region on the entire surface of the substrate, the through-dislocations including through-blade dislocations. 本公开涉及SiC单晶基板。提供降低了局部性的贯穿位错的密集的SiC单晶基板。本发明涉及的SiC单晶基板(1)的直径为199mm以上，在基板整面的各任意的0.25mm2的区域中，贯穿位错密度为5×104/cm2以下，所述贯穿位错包括贯穿刃型位错。