Light emitting diode and light emitting device

The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a second electrode. The semiconductor light-emitting sequence stacking layer comprises a first semiconductor layer, a light-emitting layer and a...

Full description

Saved in:
Bibliographic Details
Main Authors PAN ZIYAN, ZANG YASHU, CAI JIMING, ZHANG ZHONGYING, CHEN SIHE, LI JUNXIAN, HE CHUNLAN, CHEN GONG, HUANG SHAOHUA, ZENG WEIJUN
Format Patent
LanguageChinese
English
Published 01.12.2023
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a second electrode. The semiconductor light-emitting sequence stacking layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, and the first electrode is formed on the first semiconductor layer and comprises a first electrode pad and at least one first electrode extension part. The semiconductor light-emitting sequence stacking layer comprises a first side wall opposite to the first electrode pad and a second side wall opposite to the first electrode extension part, at least part of the second side wall comprises a concave-convex microstructure, and the roughness of the first side wall is smaller than that of the second side wall. Therefore, the reliability of the chip is improved while the light extraction efficiency of the LED chip is ensured to be improved, and the luminous effic
AbstractList The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a second electrode. The semiconductor light-emitting sequence stacking layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, and the first electrode is formed on the first semiconductor layer and comprises a first electrode pad and at least one first electrode extension part. The semiconductor light-emitting sequence stacking layer comprises a first side wall opposite to the first electrode pad and a second side wall opposite to the first electrode extension part, at least part of the second side wall comprises a concave-convex microstructure, and the roughness of the first side wall is smaller than that of the second side wall. Therefore, the reliability of the chip is improved while the light extraction efficiency of the LED chip is ensured to be improved, and the luminous effic
Author ZANG YASHU
PAN ZIYAN
HE CHUNLAN
CHEN GONG
LI JUNXIAN
CHEN SIHE
CAI JIMING
HUANG SHAOHUA
ZENG WEIJUN
ZHANG ZHONGYING
Author_xml – fullname: PAN ZIYAN
– fullname: ZANG YASHU
– fullname: CAI JIMING
– fullname: ZHANG ZHONGYING
– fullname: CHEN SIHE
– fullname: LI JUNXIAN
– fullname: HE CHUNLAN
– fullname: CHEN GONG
– fullname: HUANG SHAOHUA
– fullname: ZENG WEIJUN
BookMark eNrjYmDJy89L5WTQ88lMzyhRSM3NLCnJzEtXSMnMT0lVSMxLUchBk0gty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hobmhqbGluYWjsbEqAEA1CYsIQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 一种发光二极管及发光装置
ExternalDocumentID CN117153978A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN117153978A3
IEDL.DBID EVB
IngestDate Fri Jul 19 12:59:46 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN117153978A3
Notes Application Number: CN202311130238
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231201&DB=EPODOC&CC=CN&NR=117153978A
ParticipantIDs epo_espacenet_CN117153978A
PublicationCentury 2000
PublicationDate 20231201
PublicationDateYYYYMMDD 2023-12-01
PublicationDate_xml – month: 12
  year: 2023
  text: 20231201
  day: 01
PublicationDecade 2020
PublicationYear 2023
RelatedCompanies XIAMEN SAN'AN OPTOELECTRONICS CO., LTD
RelatedCompanies_xml – name: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD
Score 3.641437
Snippet The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Light emitting diode and light emitting device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231201&DB=EPODOC&locale=&CC=CN&NR=117153978A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAXYBEkGrLXRNky2AHZQUk2Rdy7RkY13TFDMjy5TUNAPIDm9fPzOPUBOvCNMIJoYs2F4Y8Dmh5eDDEYE5KhmY30vA5XUBYhDLBby2slg_KRMolG_vFmLrogbtHQMbK8AKTc3FydY1wN_F31nN2dnW2U_NL8jW0NAcmLeBXSZHZgZWYDPaHLT8yzXMCbQrpQC5SnETZGALAJqWVyLEwFSVIczA6Qy7eU2YgcMXOuENZELzXrEIg54PqB-tAFQFXqqskJKZn5KqkJiXopCDJpEKyv2iDIpuriHOHrpAi-Phvox39kO40ViMgQXY-0-VYFAAdciAfRTzFMvUVBMjw1RL40RLo2RDY8M0ExPzxERTSQYp3OZI4ZOUZuAChRhkbYYMA0tJUWmqLLCGLUmSAwcNAFLafkI
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAXYBEkGrLXRNky2AHZQUk2Rdy7RkY13TFDMjy5TUNAPIDm9fPzOPUBOvCNMIJoYs2F4Y8Dmh5eDDEYE5KhmY30vA5XUBYhDLBby2slg_KRMolG_vFmLrogbtHQMbK8AKTc3FydY1wN_F31nN2dnW2U_NL8jW0NAcmLeBXSZHZgZWYBPbAnTOvmuYE2hXSgFyleImyMAWADQtr0SIgakqQ5iB0xl285owA4cvdMIbyITmvWIRBj0fUD9aAagKvFRZISUzPyVVITEvRSEHTSIVlPtFGRTdXEOcPXSBFsfDfRnv7Idwo7EYAwuw958qwaAA6pAB-yjmKZapqSZGhqmWxomWRsmGxoZpJibmiYmmkgxSuM2Rwicpz8DpEeLrE-_j6ectzcAFCj3IOg0ZBpaSotJUWWBtW5IkBw4mAGaAgTI
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Light+emitting+diode+and+light+emitting+device&rft.inventor=PAN+ZIYAN&rft.inventor=ZANG+YASHU&rft.inventor=CAI+JIMING&rft.inventor=ZHANG+ZHONGYING&rft.inventor=CHEN+SIHE&rft.inventor=LI+JUNXIAN&rft.inventor=HE+CHUNLAN&rft.inventor=CHEN+GONG&rft.inventor=HUANG+SHAOHUA&rft.inventor=ZENG+WEIJUN&rft.date=2023-12-01&rft.externalDBID=A&rft.externalDocID=CN117153978A