Light emitting diode and light emitting device
The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a second electrode. The semiconductor light-emitting sequence stacking layer comprises a first semiconductor layer, a light-emitting layer and a...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a light-emitting diode which comprises a substrate, a semiconductor light-emitting sequence stacking layer, a first electrode and a second electrode. The semiconductor light-emitting sequence stacking layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence, and the first electrode is formed on the first semiconductor layer and comprises a first electrode pad and at least one first electrode extension part. The semiconductor light-emitting sequence stacking layer comprises a first side wall opposite to the first electrode pad and a second side wall opposite to the first electrode extension part, at least part of the second side wall comprises a concave-convex microstructure, and the roughness of the first side wall is smaller than that of the second side wall. Therefore, the reliability of the chip is improved while the light extraction efficiency of the LED chip is ensured to be improved, and the luminous effic |
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Bibliography: | Application Number: CN202311130238 |