Spin-related organic magnetoresistance device and preparation method thereof

• Main Authors: QU FENLAN, MA DONGGE, YANG DEZHI, QIAO XIANFENG, DAI YANFENG, SUN QIAN
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a spin-related organic magnetoresistance device which sequentially comprises a transparent substrate, an anode, a hole injection layer, a p/n/p type planar heterojunction layer and a cathode, the p/n/p type planar heterojunction layer sequentially comprises a first organic p type semiconductor layer, an organic n type semiconductor layer and a second organic p type semiconductor layer; the first organic p-type semiconductor layer is made of 4, 4 ', 4'-tri (N-3-methyl phenyl-N-phenyl amino) triphenylamine; the organic n-type semiconductor layer is made of 8-hydroxyquinoline aluminum; and the second organic p-type semiconductor layer is made of 4, 4 ', 4'-tri (N-3-methyl phenyl-N-phenyl amino) triphenylamine. The device is simple in structure, the charge transfer state in the planar heterojunction layer can form obviously positive magnetoresistance at the room temperature and under the action of a small external magnetic field, and the OMR amplitude reaches 27.88% at the room temperature