Preparation method and application of perovskite photoelectric conversion device structure
The invention relates to a preparation method and application of a perovskite photoelectric conversion device structure. The preparation method comprises the following steps: firstly, sequentially depositing an electron transport layer, a perovskite photoactive layer and a hole transport layer on a...
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| Main Authors | , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
28.11.2023
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The invention relates to a preparation method and application of a perovskite photoelectric conversion device structure. The preparation method comprises the following steps: firstly, sequentially depositing an electron transport layer, a perovskite photoactive layer and a hole transport layer on a substrate with a conductive layer; depositing metal halide on the hole transport layer through a thermal evaporation process to form an insulating buffer layer; wherein in the metal halide, the metal element comprises one of silver, aluminum, titanium and copper, and the halogen element comprises at least one of chlorine, bromine and iodine; and finally, depositing a back electrode on the insulating buffer layer to obtain a perovskite photoelectric conversion device structure. Compared with the prior art, the structure of the perovskite photoelectric conversion device provided by the invention can realize high conversion efficiency, allows the application of a low-cost back electrode, and reduces the cost.
本发明涉及一种钙 |
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| Bibliography: | Application Number: CN202210526042 |