Flash memory layout, flash memory and manufacturing method thereof

• Main Authors: ZHU JINGRUN, LIU XIANZHOU, SHEN SIJIE, SUN WENJIAN
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2023
• Subjects: ELECTRICITY

The invention provides a flash memory layout, a flash memory and a manufacturing method thereof. The first floating gate pattern crosses the group active region and the connecting region, so that the exposure overlay precision requirement of the second floating gate pattern and the first floating gate pattern in the connecting region is reduced, the process difficulty is reduced, and the manufacturing is easy. In two adjacent columns of connection regions, the second floating gate pattern in one column of connection region covers the first control gate with partial width, and the second floating gate pattern in the other column of connection region covers the second control gate with partial width; and disconnecting the first control gate or the second control gate between the two adjacent groups of active regions through the second floating gate pattern. The second control gate is provided with a second connecting block extending to the next row in a column of connecting regions; the first control gate is pr