Light-emitting diode element, manufacturing method thereof and light-emitting device

• Main Authors: HU PENGJIE, ZHOU LIPING, KE WEIFAN, LIU JIAYU, LIU SHENGNAN
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to the light-emitting diode element, the manufacturing method thereof and the light-emitting device provided by the invention, in the light-emitting diode element, the surface of the first bonding layer formed above the epitaxial structure is a flat surface and has no height difference, and furthermore, the roughness of the first bonding layer can be below 10nm. Therefore, when the substrate and the epitaxial structure are bonded, the two bonding layers are subjected to plane-plane bonding, similar defects such as cavities and the like are avoided, the bonding strength is ensured, the bonding stability of the substrate and the epitaxial structure is ensured, and the yield of a device is improved. And meanwhile, no similar defects such as holes exist between the two bonding layers, so that the voltage of the device is reduced, and the photoelectric efficiency of the device is improved. 本申请提供一种发光二极管元件及其制造方法及发光装置，本申请的发光二极管元件中，外延结构上方形成的第一键合层表面为平整表面，不存在高低差，进一步地，其粗糙度可以在10nm以下。因此在进行衬底和外延结构键合时，两键合层之间为平面-平面键