Manufacturing method of semiconductor device

• Main Authors: QIU CHONGYI, CAI FUYU, LIN DAJUN, CAI BINXIANG
• Format: Patent
• Language: Chinese; English
• Published: 28.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps of: forming a gate structure on an III-V compound semiconductor layer; and forming a gate silicide layer and a source/drain silicide layer through an annealing manufacturing process. The gate silicide layer is formed on the gate structure, the source/drain silicide layer is formed on the III-V compound semiconductor layer, and the material composition of the gate silicide layer is different from the material composition of the source/drain silicide layer. 本发明公开一种半导体装置的制作方法，其包括下列步骤，在III-V族化合物半导体层上形成栅极结构。通过退火制作工艺形成栅极硅化物层与源极/漏极硅化物层。栅极硅化物层形成在栅极结构上，源极/漏极硅化物层形成在III-V族化合物半导体层上，且栅极硅化物层的材料组成不同于源极/漏极硅化物层的材料组成。