Manufacturing method of semiconductor device
The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps of: forming a gate structure on an III-V compound semiconductor layer; and forming a gate silicide layer and a source/drain silicide layer through an annealing manufacturing process. The gat...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
28.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps of: forming a gate structure on an III-V compound semiconductor layer; and forming a gate silicide layer and a source/drain silicide layer through an annealing manufacturing process. The gate silicide layer is formed on the gate structure, the source/drain silicide layer is formed on the III-V compound semiconductor layer, and the material composition of the gate silicide layer is different from the material composition of the source/drain silicide layer.
本发明公开一种半导体装置的制作方法,其包括下列步骤,在III-V族化合物半导体层上形成栅极结构。通过退火制作工艺形成栅极硅化物层与源极/漏极硅化物层。栅极硅化物层形成在栅极结构上,源极/漏极硅化物层形成在III-V族化合物半导体层上,且栅极硅化物层的材料组成不同于源极/漏极硅化物层的材料组成。 |
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Bibliography: | Application Number: CN202210558734 |