METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: HAN SEUNG-HEE, CHUNG SANG GYO, LEE CHAN-MI, HONG JUNG-PYO
• Format: Patent
• Language: Chinese; English
• Published: 24.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a semiconductor device is provided in which a mask layer, a buffer layer, and a first core mold layer are sequentially stacked on a substrate including a first region and a second region. A first mandrel pattern is formed on the buffer layer in the first region, and a second mandrel pattern covering the buffer layer is formed in the second region. A first spacer is formed on the buffer layer that contacts sidewalls of the first mandrel pattern and the second mandrel pattern. The first mandrel pattern is removed. A buffer layer pattern and a preliminary mask pattern are formed on the substrate. The second mandrel pattern is removed. In addition, a mask pattern is formed. The buffer layer includes a material having a lower conductivity than the mask layer and having an etch selectivity with respect to the mask layer. 提供了用于制造半导体器件的方法，在所述方法中，在包括第一区域和第二区域的衬底上顺序地堆叠掩模层、缓冲层和第一芯模层。在所述第一区域中在所述缓冲层上形成第一芯模图案，并且在所述第二区域中形成覆盖所述缓冲层的第二芯模图案。在所述缓冲层上形成接触所述第一芯模图案和所述第二芯模图案的侧壁的第一间隔物。所述第一芯模图案被去除。在所述衬底上形成缓冲层