System for realizing bit-by-bit repair of memory and memory read-write method

• Main Authors: XIONG BAOYU, SHEN AO
• Format: Patent
• Language: Chinese; English
• Published: 17.11.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention provides a system for realizing bit-by-bit repair of a memory and a memory read-write method, and the system comprises a memory array with redundant columns, each row of array units comprises a first number of data memory units and a second number of repair units; the write-destroy operation circuit is used for performing write-destroy operation on the detected failure units in each row of array units of the storage array; the reading circuit is used for reading respective state identification of each row of array units of the storage array and data stored in the array units; the logic circuit is used for outputting a control signal and a selection signal according to the read state identifier of each row of array units; the data selection circuit is used for selecting input or output data according to the control signal and the selection signal; and the writing circuit is used for writing the data selected and input by the data selection circuit into the normal data storage unit or the normal r