Current domain 8TSRAM unit and dynamic adaptive quantization storage and calculation circuit

The invention belongs to the technical field of integrated circuits, and particularly relates to a current domain 8TSRAM unit, a dynamic adaptive quantization storage and calculation circuit, a CIM circuit and a chip thereof. The circuit is composed of two PMOS (P-channel Metal Oxide Semiconductor)...

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Bibliographic Details
Main Authors ZHAO QIANG, ZHOU YONGLIANG, LI JINZHENG, LU WENJUAN, LI XIN, LIU YUNLONG, WU XIULONG, YUAN ZIFAN, HAO LICAI, LIN ZHITING, DAI CHENGHU, HU WEI, PENG CHUNYU
Format Patent
LanguageChinese
English
Published 17.11.2023
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention belongs to the technical field of integrated circuits, and particularly relates to a current domain 8TSRAM unit, a dynamic adaptive quantization storage and calculation circuit, a CIM circuit and a chip thereof. The circuit is composed of two PMOS (P-channel Metal Oxide Semiconductor) tubes P1 to P2 and six NMOS (N-channel Metal Oxide Semiconductor) tubes N1 to N6. Wherein P1, P2 and N1-N4 form a classic 6T storage unit with two storage nodes Q and QB; the grid electrode and the drain electrode of the N5 are connected with the source electrode of the N6; the source electrode of the N5 is connected with a signal line NIN; the grid electrode of the N6 is connected with a storage node Q; the drain electrode of the N6 is connected with a calculation bit line CBL; the 6T storage unit is used for realizing a data read-write holding function; and the N5 and the N6 form a multiplication part. An 8TSRAM unit is adopted in the adaptive multiply-accumulate circuit, and a sampling current generating circuit
Bibliography:Application Number: CN202311175010