Current domain 8TSRAM unit and dynamic adaptive quantization storage and calculation circuit
The invention belongs to the technical field of integrated circuits, and particularly relates to a current domain 8TSRAM unit, a dynamic adaptive quantization storage and calculation circuit, a CIM circuit and a chip thereof. The circuit is composed of two PMOS (P-channel Metal Oxide Semiconductor)...
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Main Authors | , , , , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
17.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention belongs to the technical field of integrated circuits, and particularly relates to a current domain 8TSRAM unit, a dynamic adaptive quantization storage and calculation circuit, a CIM circuit and a chip thereof. The circuit is composed of two PMOS (P-channel Metal Oxide Semiconductor) tubes P1 to P2 and six NMOS (N-channel Metal Oxide Semiconductor) tubes N1 to N6. Wherein P1, P2 and N1-N4 form a classic 6T storage unit with two storage nodes Q and QB; the grid electrode and the drain electrode of the N5 are connected with the source electrode of the N6; the source electrode of the N5 is connected with a signal line NIN; the grid electrode of the N6 is connected with a storage node Q; the drain electrode of the N6 is connected with a calculation bit line CBL; the 6T storage unit is used for realizing a data read-write holding function; and the N5 and the N6 form a multiplication part. An 8TSRAM unit is adopted in the adaptive multiply-accumulate circuit, and a sampling current generating circuit |
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Bibliography: | Application Number: CN202311175010 |