Method for cleaning cavity of MOCVD (metal organic chemical vapor deposition) equipment

• Main Authors: ZHU CHENQI, WANG JIANGBO, CHEN-ZHANG XIAOXIONG, GONG YIPIN, WANG QUN
• Format: Patent
• Language: Chinese; English
• Published: 14.11.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention provides a cavity cleaning method of MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and belongs to the field of semiconductor manufacturing. The method comprises the following steps of: after epitaxial growth is finished, circularly etching a reaction product on the surface of a graphite disc by adopting Cl2; under the H2 atmosphere and Mg-rich environment, Al < x > Ga < y > In < 1-x-y > N is deposited in the reaction cavity, so that Mg-doped Al < x > Ga < y > In < 1-x-y > N microstructures are formed on the inner wall of the reaction cavity and the surface of the graphite disc, x is larger than or equal to 0 and smaller than or equal to 1, and y is larger than or equal to 0 and smaller than or equal to 1. According to the invention, after the Cl2 etching is carried out on the interior of the cavity, the Al < x > Ga < y > In < 1-x-y > N structure highly doped with Mg is grown in the cavity, the Mg environment in the cavity is reconstructed, and the effective doping of Mg in the epita