Flexible thin film silicon-based solar cell and preparation method thereof

• Main Authors: WANG WENXIN, HAN JIUFANG, YU XIRAN, LEI YU, HAO BIN, CHEN HONG, ZHANG YUCHAO, JIA HAIQIANG, DU CHUNHUA, LI YUN
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention relates to a flexible thin film silicon-based solar cell. The flexible thin film solar cell structurally comprises a substrate, a metal transition layer, a first heavily doped layer, a first doped layer, an absorption layer, a second doped layer, a second heavily doped layer, an anti-reflection protection layer and a metal electrode in sequence from bottom to top, wherein the first heavily-doped layer and the second heavily-doped layer are made of heavily-doped polycrystalline silicon carbide materials or composite materials formed by combining heavily-doped polycrystalline silicon carbide and transparent conductive oxide TCO, and the doping type of the second heavily-doped layer is opposite to that of the first heavily-doped layer. The first heavily-doped layer and the second heavily-doped layer utilize the advantages of wide band gap, high conductivity and low defect of polycrystalline silicon carbide materials and can replace transparent conductive oxide to be in direct cont