Homodromous enhanced GaN HEMT device and manufacturing process thereof

• Main Author: HUANG MINGLE
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of GaN HEMT (High Electron Mobility Transistor) devices, solves the technical problem of overlarge reverse conduction power consumption caused by large reverse voltage generated during reverse conduction of the GaN HEMT device, and particularly relates to a same-direction enhanced GaN HEMT device and a manufacturing process thereof, the same-direction enhanced GaN HEMT device comprises a GaN HEMT device and an insulating medium layer on the GaN HEMT device, and the bypass fast recovery diode device is formed on the insulating dielectric layer, and the anode and the cathode of the bypass fast recovery diode device are electrically connected to the second source electrode metal and the second drain electrode metal of the GaN HEMT device respectively. The four deep oxide layer groove structures arranged in the same direction are introduced into the diode drift region, so that the reverse recovery time can be shortened, dynamic punch-through, oscillation suppression an