Field effect transistor with at least partially recessed field plate

• Main Authors: BOTHE KEVIN, ALCORN TIMOTHY, RADULESCU, FLORIN, SHEPARD STACEY, GUO JIMING
• Format: Patent
• Language: Chinese; English
• Published: 07.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein laterally spaced from the gate. The transistor device includes an interlayer dielectric layer on the surface dielectric layer and a field plate on the interlayer dielectric layer. The field plate is laterally spaced apart from the gate, and at least a portion of the field plate includes a recessed portion over the aperture in the surface dielectric layer. 一种晶体管装置包括半导体层、半导体层上的表面介电层和表面介电层上的栅极的至少一部分。表面介电层在其中包括与栅极侧向间隔开的孔口。晶体管装置包括表面介电层上的层间介电层和层间介电层上的场板。场板与栅极侧向间隔开，并且场板的至少一部分包括在表面介电层中的孔口上方的凹入部分。