Gallium oxide substrate and preparation method thereof

• Main Authors: ZHAO DEGANG, WU ZHONGLIANG, LYU JIN, HU KAIPENG
• Format: Patent
• Language: Chinese; English
• Published: 03.11.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to the technical field of semiconductor processing, and particularly discloses a gallium oxide substrate and a preparation method thereof. The first main surface of the gallium oxide substrate has surface roughness Rq1 at the center position, and has surface roughness Rq2, Rq3, Rq4 and Rq5 at four positions; the average value m1 of the five surface roughness is 0 < = m1 < = 0.4 nm, and the standard deviation sigma1 is 0 < = sigma1 < = 10% * m1; the second main surface of the gallium oxide substrate has surface roughness Rq6 at the central position, and has surface roughness Rq7, Rq8, Rq9 and Rq10 at four positions; the average value of the five surface roughness is m2: 0.2 nm < = m2 < = 4 nm, and the standard deviation is [sigma] 2: 0 < = [sigma] 2 < = 10% m2. By using the preparation method provided by the invention, impurities on the surface of the gallium oxide substrate can be effectively reduced so as to realize growth of an excellent and uniform epitaxial film on the gallium oxide