Auxiliary precursor, thin film precursor composition, thin film forming method, and semiconductor substrate manufactured by method

• Main Authors: NAM JI-HYUN, LEE SEUNG-HYUN, CHO SUNG-WOO, YEON CHANG-BONG, JUNG JAE-SUN
• Format: Patent
• Language: Chinese; English
• Published: 31.10.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to an auxiliary precursor, a thin film precursor composition, a method for forming a thin film using the same, and a semiconductor substrate manufactured by the method, and provides a thin film precursor composition containing, as an auxiliary precursor, a compound having a predetermined structure exhibiting reaction stability with respect to a thin film precursor compound. In a thin film deposition process, the thin film precursor composition is used to suppress a side reaction, appropriately control the growth rate of a thin film, and remove process by-products in the thin film, thereby greatly improving step coverage, thickness uniformity of the thin film, and resistivity characteristics even if the thin film is deposited on a substrate having a complex structure, and improving the yield of the thin film. Corrosion and degradation are reduced, and the crystallinity of the film is improved, so that the electrical property of the film is improved. 本发明涉及一种辅助前体、薄膜前体组合物、利用其的薄膜形成方法以