IGBT (Insulated Gate Bipolar Translator) device, cellular structure thereof and manufacturing method of cellular structure

• Main Authors: XIE ZIXIANG, LIAO YONGBO, ZHANG FUSHENG, LI CHUNYAN
• Format: Patent
• Language: Chinese; English
• Published: 31.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an IGBT (Insulated Gate Bipolar Translator) device, a cellular structure thereof and a manufacturing method of the cellular structure. The method comprises the following steps: manufacturing a first type drift region; manufacturing a first type doped column region and a second type doped column region on the first surface of the first type drift region; manufacturing a base region, an emitter region and a polycrystalline silicon gate on the first type doped column region and the second type doped column region; a heavily-doped buffer region and a lightly-doped buffer region are manufactured on the second face, opposite to the first face, of the first type drift region, and the heavily-doped buffer region and the lightly-doped buffer region are arranged on the same layer; and manufacturing a collector region on one side, back to the first type drift region, of the heavily doped buffer region and the lightly doped buffer region. The buffer layer is made into a heavily-doped buffer region