SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: YE ZHIDONG, CAI FUYU, LIN DAJUN, CAI BINXIANG
• Format: Patent
• Language: Chinese; English
• Published: 27.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device includes a channel layer, a gate element on the channel layer, a plurality of source/drain elements at least partially embedded in the channel layer. The plurality of source/drain elements are located on opposite sides of the gate element. The plurality of source/drain elements includes a metal element and a lower silicide element interposed between the metal element and the channel layer. The lower silicide element has a hydrogen content of less than 2 at%. 本发明公开一种半导体装置及其制造方法。半导体装置包括沟道层、在沟道层上的栅极元件、至少部分地嵌入沟道层中的多个源极/漏极元件。多个源极/漏极元件位于栅极元件的相对两侧。多个源极/漏极元件包括金属元件和下硅化物元件，下硅化物元件介于金属元件和沟道层之间。下硅化物元件具有小于2at％的氢含量。