SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

Provided is a semiconductor device in which the heat dissipation performance of the semiconductor device is improved. The invention also relates to a power conversion device. The semiconductor device has an alternating region in which IGBT regions (10) and diode regions (20) are each arranged altern...

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Bibliographic Details
Main Authors HARADA KENJI, SONEDA SHINYA
Format Patent
LanguageChinese
English
Published 27.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device in which the heat dissipation performance of the semiconductor device is improved. The invention also relates to a power conversion device. The semiconductor device has an alternating region in which IGBT regions (10) and diode regions (20) are each arranged alternately in a straight line in a plan view, and is characterized in that: in a cell region comprising IGBT regions (10) and diode regions (20) each having two or more types of widths in a first direction of the alternating region in a plan view, the alternating region is provided with an alternating region in which the IGBT regions (10) and the diode regions (20) are arranged alternately in a straight line; the width in the first direction of the IGBT region (10a) closest to the center of the cell region is less than or equal to the width in the first direction of the other IGBT region (10), and the width in the first direction of the diode region (20a) closest to the center of the cell region is less than or equal to
Bibliography:Application Number: CN202310433327