Organometallic compound for thin film deposition and method for forming group 4 metal-containing thin film using same

• Main Authors: JI SUNG-JUN, LI TAIRONG, JUNG JOO-HWAN, KIM SHIN BEOM, BAEK SUN-YOUNG, CHO KYU-HO, CHOI WOONG-JIN
• Format: Patent
• Language: Chinese; English
• Published: 27.10.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to an example of the present disclosure, an organometallic compound is represented by the following Formula 1, which is used as a precursor when depositing a Group 4 metal-containing thin film to provide a high quality Group 4 metal-containing thin film. [Formula 1] # imgabs0 # in Formula 1, M is Zr or Hf, R1 is selected from the group consisting of a linear alkyl group having 2 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, R2 is a linear alkyl group having 1 to 3 carbon atoms, and R1 and R2 are different from each other. 根据本公开的示例，有机金属化合物由下式1表示，其在沉积含第4族金属的薄膜时用作前体，以提供高质量的含第4族金属的薄膜。[式1]#imgabs0#在式1中，M为Zr或Hf，R1选自具有2至6个碳原子的直链烷基和具有3至6个碳原子的支链烷基，R2为具有1至3个碳原子的直链烷基，并且R1和R2彼此不同。