Ultrasonic-assisted chemical mechanical polishing processing device for SiC single crystal wafer

• Main Authors: YE LINZHENG, WANG ZEXIAO, LYU BOYANG, LI JING, ZHU XIJING
• Format: Patent
• Language: Chinese; English
• Published: 27.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

The invention relates to the technical field of polishing processing, in particular to an ultrasonic-assisted chemical mechanical polishing processing device for a SiC single crystal wafer. Comprising a glass groove, a horizontal first rotating shaft is installed on one side of the glass groove, a polishing disc is installed at the inner end of the first rotating shaft, and a polishing pad is arranged on the side, away from the first rotating shaft, of the polishing disc; the side, close to the polishing disc, of the material carrying disc is bonded with a SiC single crystal wafer needing to be polished through a conductive adhesive, polishing liquid is contained in the lower portion in the glass, a stainless steel electrode is arranged on the inner bottom face of the glass groove, and a pulse power source is arranged on the outer side of the glass groove. The stainless steel electrode is connected with the cathode of the pulse power supply; the polishing disc, the loading disc and the SiC single crystal wafe