Ultrasonic-assisted chemical mechanical polishing processing device for SiC single crystal wafer
The invention relates to the technical field of polishing processing, in particular to an ultrasonic-assisted chemical mechanical polishing processing device for a SiC single crystal wafer. Comprising a glass groove, a horizontal first rotating shaft is installed on one side of the glass groove, a p...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
27.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of polishing processing, in particular to an ultrasonic-assisted chemical mechanical polishing processing device for a SiC single crystal wafer. Comprising a glass groove, a horizontal first rotating shaft is installed on one side of the glass groove, a polishing disc is installed at the inner end of the first rotating shaft, and a polishing pad is arranged on the side, away from the first rotating shaft, of the polishing disc; the side, close to the polishing disc, of the material carrying disc is bonded with a SiC single crystal wafer needing to be polished through a conductive adhesive, polishing liquid is contained in the lower portion in the glass, a stainless steel electrode is arranged on the inner bottom face of the glass groove, and a pulse power source is arranged on the outer side of the glass groove. The stainless steel electrode is connected with the cathode of the pulse power supply; the polishing disc, the loading disc and the SiC single crystal wafe |
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Bibliography: | Application Number: CN202311138598 |