Gas-phase in-situ synthesis method and application of hollow phosphorus-doped carbon material

The invention belongs to the field of mixed ion capacitors, and discloses a gas-phase in-situ synthesis method and application of a hollow phosphorus-doped carbon material, and the synthesis method specifically comprises the following steps: (1) preparing silicon dioxide powder and loading the silic...

Full description

Saved in:
Bibliographic Details
Main Authors SU JINZHAO, WANG KANGLI, CAI PENG, JIANG KAI
Format Patent
LanguageChinese
English
Published 24.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
CHEMISTRY
COMPOUNDS THEREOF
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
Online AccessGet full text

Cover

More Information
Summary:The invention belongs to the field of mixed ion capacitors, and discloses a gas-phase in-situ synthesis method and application of a hollow phosphorus-doped carbon material, and the synthesis method specifically comprises the following steps: (1) preparing silicon dioxide powder and loading the silicon dioxide powder into a reactor; (2) uniformly mixing a liquid oxygen-free phosphorus source and a liquid oxygen-free carbon source, blowing the mixture into a reactor by using carrier gas, and carrying out gas-phase synthesis reaction to obtain a product; and (3) etching the silicon dioxide to obtain the hollow phosphorus-doped carbon material. The silicon dioxide powder is used as a template, the hollow phosphorus-doped carbon material is obtained by matching gas-phase in-situ synthesis with etching treatment, a hollow carbon structure can be quickly and efficiently formed, and the correspondingly obtained hollow phosphorus-doped carbon material has good application prospects. The material conductivity, the disc
Bibliography:Application Number: CN202310829951