Method of manufacturing optical semiconductor device

在制造具有半导体衬底的光学半导体器件的方法中,通过使用包括源材料的选择性金属有机物汽相外延,将半导体层形成的光波导形成在所述半导体衬底上。在选择性金属有机物汽相外延中间歇地提供源材料。 In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the...

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Bibliographic Details
Main Author YASUTAKA SAKATA
Format Patent
LanguageChinese
English
Published 29.09.2004
Edition7
Subjects
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Summary:在制造具有半导体衬底的光学半导体器件的方法中,通过使用包括源材料的选择性金属有机物汽相外延,将半导体层形成的光波导形成在所述半导体衬底上。在选择性金属有机物汽相外延中间歇地提供源材料。 In a method of manufacturing an optical semiconductor device having a semiconductor substrate, an optical waveguide formed by a semiconductor layer is formed on the semiconductor substrate by the use of the selective metal-organic vapor phase epitaxy including source materials. The source materials are intermittently supplied in the selective metal-organic vapor phase epitaxy.
Bibliography:Application Number: CN19981020051