Multi-pulse sub-melting excimer laser annealing method

• Main Authors: LUO JUNWEI, WU SHAOTENG, ZHU YUANHAO, HE LI, WEN SHUYU, REN HUIXUE
• Format: Patent
• Language: Chinese; English
• Published: 20.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of semiconductors, and particularly relates to a multi-pulse sub-melting excimer laser annealing method which comprises the following steps: performing ion implantation on the surface of a semiconductor crystal to form an amorphous doped region on the surface of the semiconductor crystal; and performing pulse laser irradiation annealing on the amorphous doped region for multiple times so that the amorphous doped region is recrystallized in a sub-melting state and ions in the amorphous doped region are activated. And meanwhile, the impurity segregation effect caused by surface ablation, evaporation effect and melt cooling regeneration is avoided, so that the loss of doped atoms in the recrystallization process is greatly reduced. 本发明属于半导体技术领域，具体涉及一种多次脉冲亚熔化准分子激光退火方法，包括：对半导体晶体表面进行离子注入，在半导体晶体表面形成非晶掺杂区；向非晶掺杂区进行多次脉冲激光辐照退火，以使非晶掺杂区在亚熔化状态发生重结晶，激活非晶掺杂区的离子。同时避免了表面烧蚀、蒸发效应以及熔体冷却再生引起杂质偏析效应，使得重结晶过程中的掺杂原子损失大幅降低。