Method and apparatus for processing substrate

• Main Authors: TARNOS, JES ¨ 2 S, RUBNITZ, JOSHUA, A, BHAGAV SRIDHAR SRIDHAR, YIEH ELLIE, SRINIVASA D NEMANI, SOHAM, SANJAY, SANJAY, ASRANI, ERIKA DOMINGO CHEN, BUCHBERGER, DOUGLAS, ARTHUR, JR, BEKIARIS NIKOLAOS
• Format: Patent
• Language: Chinese; English
• Published: 17.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

Methods and apparatus for processing a substrate are provided herein. For example, a method includes: supplying a vaporized precursor into a processing volume; supplying an activated element comprising ions and radicals from a remote plasma source; exciting the activated elements to react with the vaporized precursor using RF source power at a first duty cycle to deposit a SiNHx film onto a substrate disposed in the processing volume; supplying a first process gas from the remote plasma source while providing an RF bias power to the substrate support at a second duty cycle different from the first duty cycle to convert the SiNHx film to a SiOx film; supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source while providing RF bias power to the substrate support at the second duty cycle; and annealing the substrate. 本文提供了用于处理基板的方法及设备。例如，一种方法包括：将气化的前驱物供应到处理容积中；从远程等离子体源供应包括离子和自由基的被激活元素；以第一工作周期使用RF源功率激励这些被激活元素以与该气化的前