Heterojunction screen printing method for reducing contact resistance
The invention relates to the technical field of battery pieces, and particularly discloses a heterojunction silk-screen printing method for reducing contact resistance, which specifically comprises the following steps of: S1, respectively plating a non/microcrystalline film layer and a TCO (Transpar...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
13.10.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of battery pieces, and particularly discloses a heterojunction silk-screen printing method for reducing contact resistance, which specifically comprises the following steps of: S1, respectively plating a non/microcrystalline film layer and a TCO (Transparent Conductive Oxide) film layer on the front surface and the back surface of a textured and cleaned battery piece in sequence; s2, carrying out annealing treatment on positions on the TCO film layer on the back surface of the battery piece, where the main grid and the fine grid are prepared to be printed; s3, printing a main grid and a fine grid on the back surface of the battery; s4, turning over the battery piece, and carrying out annealing treatment on the positions, for printing the main grid and the fine grid, on the TCO film layer on the front surface of the battery piece; s5, main grid and fine grid printing is carried out on the front face of the battery; and S6, curing in a curing box. According to the in |
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Bibliography: | Application Number: CN202310762421 |