Enhanced GaN high electron mobility transistor and preparation method thereof

• Main Authors: YE JICHUN, LUO TIAN, GUO WEI
• Format: Patent
• Language: Chinese; English
• Published: 13.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the field of transistors, in particular to an enhanced GaN high-electron-mobility transistor and a preparation method thereof.The enhanced GaN high-electron-mobility transistor comprises a groove structure which sequentially penetrates through a passivation layer and a gallium nitride cap layer from the top, and the bottom of the groove structure is located on an aluminum-gallium-nitrogen barrier layer; a gate electrode is arranged in the groove structure, and a band-order dielectric layer and a ferroelectric layer are sequentially arranged between the inner wall of the groove structure and the gate electrode; the band order dielectric layer is a group III nitrogen oxide layer and/or a group III oxide layer; and the band order dielectric layer and the ferroelectric dielectric layer block the direct contact between the gate electrode and the gallium nitride cap layer and block the direct contact between the gate electrode and the aluminum gallium nitrogen barrier layer. According to th