Semiconductor device

• Main Authors: XU JUNHAO, HOU CHAOZHAO, WU YING
• Format: Patent
• Language: Chinese; English
• Published: 10.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a field effect transistor. The field effect transistor includes a gate, a drain, a source, and an oxide semiconductor channel. The source electrode and the drain electrode are located at the two ends of the oxide semiconductor channel respectively. The drain electrode and the source electrode are respectively contacted with a plurality of surfaces of the oxide semiconductor channel so as to increase the contact area of the source electrode and the drain electrode with the oxide semiconductor channel, thereby reducing the contact resistance. The contact resistance of the semiconductor device is reduced, so that the current under the same voltage is increased, and the current driving capability and the response speed of the field effect transistor are improved. 本公开涉及一种半导体器件及其制造方法。半导体器件包括场效应晶体管。该场效应晶体管包括栅极、漏极、源极和氧化物半导体沟道。源极和漏极分别位于氧化物半导体沟道的两端。漏极和源极分别与氧化物半导体沟道的多个表面相接触以增大源极和漏极与氧化物半导体沟道的接触面积，从而降低接触电阻