Method for manufacturing support substrate for bonded wafer, and support substrate for bonded wafer

• Main Authors: NONAKA NAOYA, HIEDA DAISUKE, ISHIZAKI HIROAKI, MOROIWA KODAI, ISAMI TOSHIYUKI
• Format: Patent
• Language: Chinese; English
• Published: 10.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a method for manufacturing a support substrate for a bonded wafer in which a substrate for an active layer and a support substrate are bonded with an insulating film interposed therebetween, the method comprising: a support substrate main body preparation step (S21) in which a substrate for an active layer and a support substrate main body are bonded; preparing a support substrate main body composed of a monocrystalline silicon wafer; an oxide film formation step (S22) in which an oxide film is formed on the support substrate main body; a polysilicon layer deposition step (S23) in which a polysilicon layer is deposited on the oxide film; a protective oxide film formation step (S24) for forming a protective oxide film on the surface of the polycrystalline silicon layer; and a polishing step (S25) for polishing the polycrystalline silicon layer while removing the protective oxide film by polishing. 本发明提供一种贴合晶圆用支撑基板的制造方法，所述贴合晶圆用支撑基板通过使活性层用基板与支撑基板隔着绝缘膜贴合而成，所述贴合晶圆用支撑基板的制造方法具有：支撑基板主体准备工序(S21)，准备由单晶硅晶圆组成