Rapid extraction method for dynamic characteristic parameters of MOSFET device

• Main Authors: MAO JINJIN, HUANG ZHIZHAO, LI YUXIONG
• Format: Patent
• Language: Chinese; English
• Published: 10.10.2023
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The invention discloses a method for quickly extracting dynamic characteristic parameters of an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device. The method comprises the following steps of: zeroing dipulse experimental data on an oscilloscope and exporting the dipulse experimental data into a table form; reading and displaying double-pulse circuit experiment table data of the MOSFET device by a program; selecting turn-off and turn-on process ranges of the MOSFET device according to the actually measured switching process, and obtaining a physical quantity steady-state value of the corresponding switching range; automatically analyzing and extracting dynamic characteristic parameters of the MOSFET device by using a program based on the read experimental data and the identified turn-off and turn-on process, and calculating turn-on and turn-off losses; and finally, a result is exported and visually displayed. According to the method, the defects that errors are large and time and efficiency are