Bulk silicon inner cavity structure and preparation method thereof

• Main Authors: WANG WEI, ZHANG TIEBIN, ZHENG DEYIN, ZHANG CHI
• Format: Patent
• Language: Chinese; English
• Published: 10.10.2023
• Subjects: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; TRANSPORTING

The invention provides a bulk silicon inner cavity structure and a preparation method thereof. The preparation method comprises the following steps: providing a silicon substrate; etching the upper surface of the silicon substrate to form a first porous layer; etching to generate a second porous layer; corroding and removing the second porous layer to form a cavity communicated with the first pores; and covering the upper surface of the silicon substrate and the upper surface of the first porous layer to form a thin film layer. The preparation method is simple, efficient and low in cost, and the size of the cavity and the thickness uniformity of the silicon film can be effectively controlled through the design of the first porous layer and the second porous layer. 本发明提供了一种体硅内空腔结构及其制备方法，该制备方法包括以下步骤：提供硅衬底；在所述硅衬底的上表面刻蚀形成第一多孔层；刻蚀生成第二多孔层；腐蚀去除所述第二多孔层，以形成连通所述第一孔隙的空腔；覆盖所述硅衬底的上表面以及所述第一多孔层的上表面形成薄膜层。该制备方法简单、高效，成本低，而且通过第一多孔层和第二多孔层的设计可以有效控制空腔的大小以及硅薄膜厚度的均匀性。