Phase change memory cell with bidirectional threshold switch

A structure includes a bottom electrode (104), a vertically aligned phase change material layer (106), and a bidirectional threshold switching layer (106) vertically aligned over the phase change material layer (106). A structure includes a bottom electrode (104), a phase change material layer (106)...

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Bibliographic Details
Main Authors BRUCE ROBERT L, GONG NANBO, REZNICEK ALEXANDER, ANDO TAKASHI, HEKMASHOR-TABARI BABAK
Format Patent
LanguageChinese
English
Published 29.09.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A structure includes a bottom electrode (104), a vertically aligned phase change material layer (106), and a bidirectional threshold switching layer (106) vertically aligned over the phase change material layer (106). A structure includes a bottom electrode (104), a phase change material layer (106), and a bidirectional threshold switching layer (118) vertically aligned over the phase change material layer (106), and a second barrier layer (120) physically separating the bidirectional threshold switching layer (118) from a top electrode (122). A method includes forming a structure including a liner vertically aligned over a first barrier layer (108), the first barrier layer (108) vertically aligned over a phase change material layer (106), the phase change material layer (106) vertically aligned over a bottom electrode (104); forming a dielectric (114) surrounding the structure; and forming a bidirectional threshold switching layer (118) on the first barrier layer (108), a vertical side surface of the bidirec
Bibliography:Application Number: CN202180083147