MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

The invention relates to a memory device and a manufacturing method of the memory device. A memory device and a method of manufacturing the memory device are provided. A memory device includes a source structure and a stack structure over the source structure, the stack structure including a plug an...

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Bibliographic Details
Main Authors RYU YOUNG-TAE, KIM HYUN-SUP, KIM CHEOLYOUNG, BIN JIN-HO
Format Patent
LanguageChinese
English
Published 29.09.2023
Subjects
ELECTRICITY
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Summary:The invention relates to a memory device and a manufacturing method of the memory device. A memory device and a method of manufacturing the memory device are provided. A memory device includes a source structure and a stack structure over the source structure, the stack structure including a plug and a slit, where the slit includes a source contact connected to the source structure. 本申请涉及存储器装置以及该存储器装置的制造方法。提供了一种存储器装置及存储器装置的制造方法。存储器装置包括源极结构以及在源极结构上方的层叠结构，层叠结构包括插塞和狭缝，其中狭缝包括连接到源极结构的源极接触件。
Bibliography:Application Number: CN202211198138