Impurity supplementing and doping process in czochralski method crystal growth process

• Main Authors: XU NING, CAO BO, YU HONGGUO, SU SHUANGXI, KONG TENGFEI, YANG ZHE, WANG MENG, LU SHUJUAN, LI HUANHUAN, LIU ZHIYUAN, ZHANG LU, ZHANG XIAOREN, MA ZHIYONG
• Format: Patent
• Language: Chinese; English
• Published: 29.09.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides an impurity supplementing and doping process in a Czochralski method crystal growth process. The impurity supplementing and doping process in the Czochralski method crystal growth process comprises the following steps: A, releasing a shoulder part through cooling or retaining the shoulder part after a crystal is molten back; b, lifting the shoulder by a first preset height, and waiting for a first preset time to cool the shoulder; c, lowering the crystal, enabling the edge of the shoulder to be below the liquid level, giving second preset time for crucible rotation, crystal rotation and stabilization, lifting the shoulder out of the liquid level, observing whether a step-shaped groove appears in the shoulder, and if not, repeating the steps B and C; d, closing the crucible rotation and the crystal rotation, lifting the shoulder part into the auxiliary chamber of the single crystal furnace, closing the gate valve between the main chamber and the auxiliary chamber, and waiting for a third